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Nitride Phosphor and Production Process Thereof, and Light Emitting Device 发明申请

2022-07-31 1230 1859K 0

专利信息

申请日期 2024-11-17 申请号 KR1020037015150
公开(公告)号 KR1020040093374A 公开(公告)日 2004-11-05
公开国别 KR 申请人省市代码 全国
申请人 NICHIA CORPORATION
简介 A base nitride phosphor is represented by the general formula : LXMYN((2/3)X + (4/3)Y) : R or LXMYOZN((2/3)X + (4/3)Y - (2/3)Z) : R, wherein L is at least one element selected from Group II elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one element selected from Group IV elements consisting of C, Si and Ge, with the proviso that M comprises Si, and R is at least one element selected from rare earth elements consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu, with the proviso that R comprises Eu, and absorbs at least a part of a light having a first emission spectrum having a peak wave length of 500 nm or less and emits a light having a second emission spectrum having at least one peak in the range of 520 to 780 nm. The present invention provides the base nitride phosphor which further comprises another element; and a method for preparing the nitride phosphor. The novel nitride phosphor emits a light containing a red component in a relatively great proportion and exhibiting enhanced brightness, with enhanced luminous efficiency, and also is highly durable. © KIPO & WIPO 2007


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