| 申请日期 | 2024-11-17 | 申请号 | JP2003114616 |
| 公开（公告）号 | JP2004319907A | 公开（公告）日 | 2004-11-11 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | OMI TADAHIRO; TOKYO ELECTRON LTD | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a method capable of forming a good insulating film in all directions. SOLUTION : In the semiconductor device, an SiC substrate is employed and an insulating film is formed by plasma treatment. The insulating film contains rare gas. Preferably, the rare gas contains at least one of krypton (Kr), argon (Ar) and xenon (Xe). A combination of oxygen gas and krypton (Kr) is preferably employed. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
