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SILICON OPTICAL ELEMENT 发明申请

2022-07-31 3260 127K 0

专利信息

申请日期 2024-11-17 申请号 JP2003110030
公开(公告)号 JP2004319668A 公开(公告)日 2004-11-11
公开国别 JP 申请人省市代码 全国
申请人 NIPPON TELEGRAPH TELEPHONE
简介 PROBLEM TO BE SOLVED : To realize easily a more detailed and inexpensive silicon optical integrated circuit by enabling monolithic formation of a core and a light emitting part which are composed of silicon on an identical substrate. SOLUTION : By applying potentials to electrodes 111, 112, at least a part of an emission member core 103 is turned into depletion, and carrier is injected into an emission member core 103. Accelerated carrier is made to collide against rare earth element added in the emission member core 103, and excites the rare earth element, thereby producing luminescence in the emission member core 103. The luminescence is shut up by waveguide type diffraction grating 105, 106, and reflection and stimulated emission are repeated. A laser beam oscillates from the waveguide type diffraction grating 105 side.


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