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METHOD FOR MANUFACTURING RARE EARTH-IRON GARNET FILM BY LIQUID PHASE EPITAXIAL METHOD 发明申请

2022-07-31 1760 47K 0

专利信息

申请日期 2024-11-18 申请号 JP2003120330
公开(公告)号 JP2004323300A 公开(公告)日 2004-11-18
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO METAL MINING CO
简介 PROBLEM TO BE SOLVED : To provide a method for manufacturing a rare earth-iron garnet film by a liquid phase epitaxial method, by which crystal failures, such as cracks generated during crystal growth or cracks generated at room temperature after crystal growth, can be easily reduced.SOLUTION : The method for manufacturing the rare earth-iron garnet film by the liquid phase epitaxial method comprises bringing a garnet substrate 4 into contact with a melt 3 in a crucible 2, which melt is obtained by melting the components of a rare earth-iron garnet into a lead oxide-based flux, and then growing the crystal of the rare earth-iron garnet film on the substrate. In the method, the temperature distribution in the depth direction of the melt at the central part of the horizontal cross section of the crucible is controlled to be within ±1.5°C except a region from the melt surface to a depth of ≤5 mm.


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