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Protective thin film for FPDS, method for producing said thin film and FPDS using said thin film 发明授权

2022-07-31 3820 2979K 0

专利信息

申请日期 2024-11-18 申请号 US09457743
公开(公告)号 US6821616B1 公开(公告)日 2004-11-23
公开国别 US 申请人省市代码 全国
申请人 Mitsubishi Materials Corporation
简介 The present invention provides a protecting film capable of preventing deterioration in adhesion and matching to a substrate (dielectric layer), and deterioration in electric insulation. The protecting film includes a film body composed of MgO or the like which is inhibited from reacting with CO2gas and H2O gas in air to prevent degeneration of MgO or the like into MgCO3and Mg(OH)2, etc. harmful to FPD. The film body is formed on the surface of the substrate, and the fluoride layer is formed on the surface of the film body. The fluoride layer is represented by MOXFY(M is Mg, Ca, Sr, Ba, an alkali earth complex metal, a rare earth metal, or a complex metal of an alkali earth metal and a rare earth metal, 0≦X<2, and 0


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