| 申请日期 | 2024-11-18 | 申请号 | US10443258 |
| 公开（公告）号 | US20040234782A1 | 公开（公告）日 | 2004-11-25 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | SUN ELLEN Y | ||
| 简介 | A bond layer for a silicon based substrate comprises a refractory oxide forming metal having a thickness of between about 0.1 to 20 micron. The refractory oxide forming metal comprise chromium, tantalum, niobium, silicon, platinum, hafnium, yttrium, aluminum, zirconium, titanium, rare earth metals, alkaline earth metals and mixtures thereof. | ||
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