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COMPOSITION, RAW MATERIAL COMPRISING THE COMPOSITION AND USED FOR CHEMICAL GAS PHASE GROWTH, AND M 发明申请

2022-07-31 2830 283K 0

专利信息

申请日期 2024-11-27 申请号 JP2003128116
公开(公告)号 JP2004331542A 公开(公告)日 2004-11-25
公开国别 JP 申请人省市代码 全国
申请人 ASAHI DENKA KOGYO KK
简介 PROBLEM TO BE SOLVED : To provide a composition which is suitable, when a bismuth supply source compound and a rare earth element-supplying source compound are mixed and used on the production of a rare earth element-substituted bismuth titatate-based thin film, and to provide a method for producing the thin film using the composition. SOLUTION : This composition comprises 1 pt. mol. of a bismuth compound represented by general formula (I) and 0.01 to 1 pt. mol. of a rare earth element compound represented by general formula (II).


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