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METHOD OF FORMING FLUORINATED CARBON FILM 发明申请

2022-07-31 4860 1176K 0

专利信息

申请日期 2024-11-18 申请号 WOJP04006749
公开(公告)号 WO2004105114A1 公开(公告)日 2004-12-02
公开国别 WO 申请人省市代码 全国
申请人 TOKYO ELECTRON LIMITED; OHMI Tadahiro
简介 With a view toward enhancing the adhesion between a fluorinated carbon film and a substratum film, there is provided a method of forming a fluorinated carbon film on a substrate to be treated, characterized in that the method comprises the first step of, by means of a substrate treating unit, effecting plasma excitation of a rare gas and carrying out surface treatment of the substrate with the plasma-excited rare gas and the second step of forming a fluorinated carbon film on the resultant substrate, the substrate treating unit including a microwave antenna electrically connected to a microwave power source.


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