客服热线:18202992950

DRY ETCHING METHOD 发明申请

2022-07-31 1500 79K 0

专利信息

申请日期 2024-11-18 申请号 JP2003138848
公开(公告)号 JP2004342892A 公开(公告)日 2004-12-02
公开国别 JP 申请人省市代码 全国
申请人 MATSUSHITA ELECTRIC IND CO LTD
简介 PROBLEM TO BE SOLVED : To provide a method of eliminating the surface oxide film of titanium or a titanium compound in the dry etching method of a laminated structure of rare metal film and titanium or a titanium compound. SOLUTION : The dry etching method of dry-etching a laminated substance includes a first layer is of rare metal and a second layer is of titanium or a titanium compound under the first layer, in which includes a first process to generate an oxide film at the surface of the second layer after eliminating the first layer under the patterned mask with the mixed gas including chlorine atom and oxygen atom, a second process to eliminate the oxide film generated at the surface of the second layer using the mixed gas which is mainly formed of chlorine atom, and a third process to eliminate the second layer using the mixed gas which is mainly formed of chlorine atom.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报