| 简介 |
PURPOSE : To obtain an EL element of high brightness. CONSTITUTION : On the first insulating layer 13 luminous layer 14 which consists of a semiconductive membrane to which a rare earth element and a haloid element are added is formed by an organic metal vapor diposition. While the above haloid element is replaced to the grid position of a VI family element of the host materials, the haloid element is positioned near the rare earth element. As a result, the crystal symmetric property around the luminous center is reduced, the relative function with a crystal field is generated in a 4f inner shell level, of the orbit in the electron configuration of the rare earthe element, and its energy level is splited. And the EL element comes to have plural peak split spectra in the scope of wave length 10nm including the peak center wave length of the luminous spectrum of the rare earth element, so as to increase the EL luminous intensity extensively. Consequently, even in an EL element presenting a luminous brightness not reaching to a practical luminous brightness conventionally, an EL element with a remarkably high luminous brightness can be formed. |
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