| 简介 |
PROBLEM TO BE SOLVED : To provide a memory cell and a method for controlling the resistance properties in a memory material.
SOLUTION : The method includes a step of forming a manganite, a step of forming a manganite; a step for annealing the magnetite in an oxygen atmosphere, and a step of controlling the oxygen content in the manganite in response to the annealing step, and a step of controlling the resistance between manganite pieces in response to the oxygen content. The manganite is composed of a perovskite-type manganese oxide expressed by the general formula of RE1-xAExMnOy, where RE and AE respectively denote an rare-earth ion and an alkaline earth ion and x falls within the range of 0.1-0.5. The step of controlling the oxygen content in the manganite contains a step of forming an oxygen-rich RE1-xAExMnOy area where, y is >3. Consequently, a low resistance produces an oxygen-rich manganite region. When y is <3, a high resistance is formed. |
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