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SILICON NITRIDE ANTI-WEAR MEMBER AND PROCESS FOR PRODUCING THE SAME 发明申请

2022-07-31 1810 289K 0

专利信息

申请日期 2024-11-18 申请号 KR1020047015603
公开(公告)号 KR1020040105833A 公开(公告)日 2004-12-16
公开国别 KR 申请人省市代码 全国
申请人 KABUSHIKI KAISHA TOSHIBA
简介 Silicon nitride anti-wear member (2) characterized in that it is constituted of a ceramic sintered compact comprising 55 to 75 mass%% of silicon nitride, 12 to 28 mass%% of silicon carbide, 3 to 15 mass%%, in terms of silicide, of at least one element selected from the group consisting of Mo, W, Ta and Nb and 5 to 15 mass%% of grain boundary phase constituted of rare earth element-Si-Al-O-N and that the silicon nitride anti-wear member exhibits an electric resistance of 107 to 104 Ω · cm, a porosity of 1%% or less and a 3-point bending strength of 900 MPa or more. These enable providing a silicon nitride anti-wear member which exhibits not only intrinsic high strength and high toughness of silicon nitride but also given electrical resistance (conductivity) and which is especially excellent in sliding characteristics; and further providing a process for producing such a silicon nitride anti-wear member. © KIPO & WIPO 2007


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