| 申请日期 | 2024-11-18 | 申请号 | JP2003201294 |
| 公开（公告）号 | JP2004356607A | 公开（公告）日 | 2004-12-16 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | TOSHIBA CORP | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a thermoelectric conversion material containing a half-Heusler compound as a main phase, having high Seebeck coefficient and low resistivity, sufficiently reduced thermal conductivity, and large dimensionless performance index ZT.
SOLUTION : The material is characterized by having as a main phase with an MgAgAs type crystal structure represented by the formula (Tia1Znb1Hfc1)xNiySn100-x-y or (Lnd(Tia2Znb2Hfc2)1-d)xNiySn100-x-y, wherein 0 | ||
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