| 简介 |
PROBLEM TO BE SOLVED : To provide a method which improves a characteristic deterioration caused by carbon, sub-oxide or dangling bond included in an inter-electrode insulating film of a capacity for use in a gate insulating film of a MOSFET or a memory device and enhances a characteristic of the insulating film.
SOLUTION : In order to enhance an effect by only a modification by a plasma processing and only a modification by a thermal annealing processing, a plasma based on a processing gas containing a rare gas and an oxygen atom is used, and a modification processing which combines the plasma processing with the thermal annealing processing is performed on the insulating film, to modify the insulating film. |
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