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SILICON NITRIDE ANTI-WEAR MEMBER AND PROCESS FOR PRODUCING THE SAME 发明申请

2022-07-31 2330 467K 0

专利信息

申请日期 2024-11-18 申请号 EP03715733
公开(公告)号 EP1491518A1 公开(公告)日 2004-12-29
公开国别 EP 申请人省市代码 全国
申请人 Kabushiki Kaisha Toshiba
简介 A silicon nitride wear resistant member is composed of a ceramic sintered body containing 55 to 75 mass% of silicon nitride, 12 to 28 mass% of silicon carbide, 3 to 15 mass% of at least one element selected from the group consisting of Mo, W, Ta, and Nb in terms of silicide thereof, and 5 to 15 mass% of grain boundary phase composed of a rare earth element-Si-Al-O-N, the wear resistant member having an electrical resistance of 107 to 104 Ω·cm, a porosity of 1% or less, and a three point bending strength of 900 MPa or more. The wear resistant member has a predetermined electric resistance (electro-conductivity) in addition to the high strength and toughness inherent in silicon nitride per se, especially has a high sliding characteristic. Also, a method of manufacturing the wear resistant member is provided.


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