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A gold alloy wire for semiconductor device 发明授权

2022-07-31 3260 184K 0

专利信息

申请日期 2024-11-19 申请号 JP09223981
公开(公告)号 JP3612180B2 公开(公告)日 2005-01-19
公开国别 JP 申请人省市代码 全国
申请人 Nippon Steel Corporation6655
简介 PROBLEM TO BE SOLVED : To provide a gold and silver alloy thin wire containing a high- concentration silver, and having a high junction reliability in junction with an aluminum electrode, at a low material cost. SOLUTION : This thin wire contains Ag in a range from 20 to 45 vol.%, and furthermore contains at least one of Cu, Pd and Pt from 0.2 to 5 vol.% as a total amount, or at least one of Mn and Cr from 0.01 to 0.3 vol.% as a total amount. The residue comprises gold and unavoidable impurities. The thin wire may further contain at least one kind of Ca, In and rare-earth element from 0.001 to 0.1 vol.% as a total amount, as required.


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