| 简介 |
PROBLEM TO BE SOLVED : To reduce the manufacturing cost of a semiconductor device and to realize high reliability in a hostile environment by reducing the content of gold in a gold thin wire, while maintaining the performance of the wire as a gold thin wire for semiconductor-device bonding. SOLUTION : This thin wire contains Ag in a range of 1 to 11 vol.%, and further contains at least one kind from among Cu, Pd and Pt, at least one kind from among Ca, In, Be and rare-earth element, and at least one kind from Mn and Cr, by predetermined amount, in required content, so that the residual comprises gold and unavoidable impurities. Preferably, the content of Ag is within the range of 1 to 6 vol.%. |
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