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ALLOY OF AMORPHOUS LIGHT RARE EARTH-TRANSITION METAL AND SEMIMETAL AND A MANUFACTURING METHOD THEREO 发明授权

2022-07-31 4950 178K 0

专利信息

申请日期 2024-11-19 申请号 KR1019980011891
公开(公告)号 KR100468827B1 公开(公告)日 2005-01-20
公开国别 KR 申请人省市代码 全国
申请人 SAMSUNG ELECTRONICS CO LTD
简介 PURPOSE : An alloy of amorphous light rare earth-transition metal and semimetal and a manufacturing method thereof are provided to increase vertical magnetic anisotropy on a film surface. CONSTITUTION : A manufacturing method of an alloy of amorphous light rare earth-transition metal and semimetal, depositing semimetal on amorphous light rare earth-transition metal by a sputtering method includes a step of differently giving argon-sputtering pressure according to a sign of a saturated magnetostriction constant and making the saturated magnetostriction constant and the sign of stress opposed. If the sign of the saturated magnetostriction constant of the alloy is positive, low argon-sputtering pressure is given to make the inner stress state of the alloy become a negative compressive stress state. If the sign of the saturated magnetostriction constant of the alloy is negative, high argon-sputtering pressure is given to make the inner stress state of the alloy become a positive compressive stress state. © KIPO 2006


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