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Silicon Nitride Sintered Body 发明授权

2022-07-31 1730 183K 0

专利信息

申请日期 2025-02-26 申请号 DE19839081
公开(公告)号 DE19839081B4 公开(公告)日 2005-01-20
公开国别 DE 申请人省市代码 全国
申请人 KYOCERA CORP
简介 A silicon nitride sintered body containing a beta -silicon nitride crystal phase and further containing at least a rare earth element component and an aluminium component in a grain boundary phase, wherein the intensity ratio (X2/X1) of the Si peak X2 at 521 cm-1 to the Si3N4 peak X1 at 206 cm-1, as detected by a Raman spectrochemical analysis method, is 0.2 to 3. A very minor amount of Si (elemental silicon), as detected by the Raman spectrochemical analysis method, is precipitated in the sintered body, and by this precipitation of Si, strength and toughness are markedly increased.


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