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Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and ci 发明授权

2022-07-31 4200 2708K 0

专利信息

申请日期 2024-11-19 申请号 US09956033
公开(公告)号 US6846765B2 公开(公告)日 2005-01-25
公开国别 US 申请人省市代码 全国
申请人 Hisayuki Imamura; Shigeyuki Hamayoshi; Tsunehiro Kawata; Masahisa Sobue
简介 A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6-7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1-50 parts by weight of a first silicon nitride powder having a particle ratio of 30-100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2-10 μm, and an aspect ratio of 10 or less, with 99−50 parts by weight of α-silicon nitride powder having an average particle size of 0.2-4 μm; and sintering the resultant mixture at a temperature of 1, 800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.


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