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Silicon nitride sintered material and production process thereof 发明授权

2022-07-31 4090 598K 0

专利信息

申请日期 2024-11-19 申请号 US10024015
公开(公告)号 US6849207B2 公开(公告)日 2005-02-01
公开国别 US 申请人省市代码 全国
申请人 Kouji Funaki; Katsura Matsubara; Hiroki Watanabe; Masaya Ito
简介 A silicon nitride sintered material containing a silicon nitride component and silicon carbide having an average particle size of 1 μm or less in an amount of at least 1 mass % and less than 4 mass %, based on 100 mass % of the silicon nitride component. The carbide is dispersed in the silicon nitride component, and the silicon nitride sintered material has a thermal expansion coefficient of at least 3.7 ppm/° C. between room temperature and 1, 000° C. The silicon nitride component contains a rare earth element in an amount of 15-25 mass % as reduced to a certain oxide thereof and Cr in an amount of 5-10 mass % as reduced to a certain oxide thereof, and a crystalline phase is present in intergrain regions of the sintered material.


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