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LCD TO USE A MIGRATION RESISTANCE ALLAY AS A GATE LINE 发明授权

2022-07-31 3690 162K 0

专利信息

申请日期 2024-11-19 申请号 KR1019960070577
公开(公告)号 KR100471770B1 公开(公告)日 2005-02-03
公开国别 KR 申请人省市代码 全国
申请人 SAMSUNG ELECTRONICS CO LTD
简介 PURPOSE : An LCD(Liquid Crystal Display) is provided to use a migration resistant alloy as a gate line, thereby removing the badness of the LCD due to the stress migration. CONSTITUTION : A gate electrode(20) made of a rare earth metal Al alloy is formed on a substrate(10). An insulating film(30) is formed on the substrate so that the gate electrode is covered. An amorphous silicon layer(35) is formed at the position corresponding to the gate electrode on the insulating film. An n+ amorphous silicon layer(40) is formed on the amorphous silicon layer so that a center portion of the amorphous silicon layer is exposed. Source and drain electrodes(50, 51) are formed on the n+ amorphous silicon layer and a passivation film(60) is formed at the source and drain electrodes so that a portion of the drain electrode is exposed. A pixel electrode(70) is formed on the protective film and connected to the drain electrode. © KIPO 2006


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