| 简介 |
The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction ( 70 ) consisting of : a magnetic layer, known as the trapped layer ( 71 ), having hard magnetisation; a magnetic layer, known as the free layer ( 73 ), the magnetisation of which may be reversed; and an insulating layer ( 72 ) which is disposed between the free layer ( 73 ) and the trapped layer ( 71 ) and which is in contact with both of said layers. The free layer ( 73 ) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy. |
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