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SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF 发明申请

2022-07-31 2740 1394K 0

专利信息

申请日期 2024-11-19 申请号 WOJP04010361
公开(公告)号 WO2005012591A1 公开(公告)日 2005-02-10
公开国别 WO 申请人省市代码 全国
申请人 NIKKO MATERIALS CO LTD
简介 A sintered sputtering target which has a structure having an average crystallite size of 1 nm to 50 nm and preferably comprises an alloy having three or more elements and containing, as a main component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal; and a method for producing said target, which comprises sintering an atomized powder. The target and the method provide a target having an extremely fine and uniform structure having a high density and being produced by the sintering method, in place of a conventional bulk metal glass produced by the rapid cooling of a molten metal, which has a coarse crystal structure and requires a high cost for its production.


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