| 简介 |
PROBLEM TO BE SOLVED : To provide a method by which a semiconductor device can be manufactured inexpensively in which semiconductor elements each having LDD or GOLD structure which is low in crystal grain boundary density and high in mobility are accumulated, or a semiconductor device in which semiconductor elements which are high in mobility, low in power consumption, and hardly deteriorated are accumulated.
SOLUTION : In the method of manufacturing the semiconductor devices, n-type or p-type low-concentration and high-concentration impurity regions are formed in a semiconductor region by adding (ion doping) a rare-gas element and an impurity element to the semiconductor region in a self-aligning way. Typically, the low-concentration impurity region covered with a gate electrode is formed by adding (ion doping) the rare-gas element and impurity element to the semiconductor region at an angle of 0°-60°, preferably, 5°-45° to the substrate. |
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