| 申请日期 | 2024-11-19 | 申请号 | JP2002220031 |
| 公开（公告）号 | JP3621695B2 | 公开（公告）日 | 2005-02-16 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | TOSHIBA CORPORATION3078 | ||
| 简介 | A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film. | ||
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