| 申请日期 | 2024-11-19 | 申请号 | US10661910 |
| 公开（公告）号 | US20050035704A1 | 公开（公告）日 | 2005-02-17 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | KOSYACHKOV ALEXANDER | ||
| 简介 | A novel structure is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a silicon oxynitride layer provided directly adjacent the top and/or bottom of the phosphor thin film layer, wherein said silicon oxynitride layer comprises a composition of Si3NxOyHz where 2≦x≦4, 0 | ||
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