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Thick film high temperature superconducting device supporting high critical currents and method for 发明申请

2022-07-31 1610 523K 0

专利信息

申请日期 2024-11-19 申请号 US10381342
公开(公告)号 US20050043183A1 公开(公告)日 2005-02-24
公开国别 US 申请人省市代码 全国
申请人 CHAN SIU WAI
简介 A thick film superconductor includes a substrate and a superconducting thick film formed on the substrate. The thick film is 1-20 microns thick with an average twin spacing to film thickness ratio of about 0.016, and is formed from an aqueous solution of YBC ions doped with a particulate rare earth oxide having a diameter of about 50-500 nm. The coated substrate is heat treated, preferably above 650 degrees C. and cooled at a rate less than 15 degrees C. per hour, resulting in a substantially fully oxygenated YBCO layer.


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