客服热线:18202992950

Short wavelength for production of single crystal bismuth substd. rare earth iron garnet 发明授权

2022-07-31 4360 51K 0

专利信息

申请日期 2024-11-19 申请号 JP07150305
公开(公告)号 JP3624918B2 公开(公告)日 2005-03-02
公开国别 JP 申请人省市代码 全国
申请人 Mitsubishi Gas Chemical Co Ltd4466
简介 A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of : manufacturing a BIG-grown substrate in an LPE furnace by the LPE method, the BIG-grown substrate having a bismuth-substituted rare-earth iron garnet single crystal film grown on one surface of a non-magnetic garnet single crystal substrate, the film having a thickness in the range of 20-100 mu m; spinning the BIG-grown substrate at a high speed to remove a melt adhering thereto prior to taking the BIG-grown substrate out of the LPE furnace; and cooling the BIG-grown substrate to 300 DEG C. within one minute.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报