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Multi-crystalline SiC molded body, its manufacturing method and article made therefrom 发明授权

2022-07-31 2400 280K 0

专利信息

申请日期 2024-11-19 申请号 JP2000211643
公开(公告)号 JP3624219B2 公开(公告)日 2005-03-02
公开国别 JP 申请人省市代码 全国
申请人 KEMPTEN ELEKTROSCHMELZ GMBH
简介 At least three hard phase globular grains of mean size up to 4 mu m surround a triple-point. Each has an SiC core and an Si-C-Al-O-N mixed crystal casing with Al/N atomic ratio of 0.1-2.0. The partially-crystalline binder phase comprises rare earth metal-Al-Si-O. The amorphous phase comprises a globular grain with surrounding boundary film and the crystalline phase is a precipitate of rare earth metal-aluminate. An Independent claim is included for a detailed procedure producing the molding, including e.g. heating, sintering, compaction, preheating, driving off binder, and firing. Details of temperatures, atmospheres, binders and formulation are quantified. Please also see uses.


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