| 申请日期 | 2024-11-19 | 申请号 | US10954275 |
| 公开（公告）号 | US20050047252A1 | 公开（公告）日 | 2005-03-03 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Nestor A Bojarczuk; Eduard Albert Cartier; Supratik Guha | ||
| 简介 | A data storage element (and method of forming the same) includes a substrate comprising a semiconductor material, a metal oxide layer including an electrically insulating rare earth metal oxide disposed upon a surface of the substrate, a conductive material disposed upon the metal oxide layer, a first electrode electrically connected to the conductive material, and a second electrode connected to the substrate. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
