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RARE EARTH SILICATE SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME 发明申请

2022-07-31 3070 87K 0

专利信息

申请日期 2024-11-19 申请号 JP2004180161
公开(公告)号 JP2005053772A 公开(公告)日 2005-03-03
公开国别 JP 申请人省市代码 全国
申请人 HITACHI CHEMICAL CO LTD
简介 PROBLEM TO BE SOLVED : To provide a rare earth silicate single crystal in which the generation of a cleavage crack can be sufficiently prevented even when it is manufactured in a large size; and to provide a method for manufacturing the same. SOLUTION : The rare earth silicate single crystal 1 can be formed by cutting out a single crystal ingot when it is manufactured as the single crystal ingot, and has a crystal surface F100 whose surface index can be determined by an X-ray diffraction method. The crystal surface F100 is constituted of a plurality of flat partial area surfaces (e.g., partial area surface f100A and partial area surface f100B). The plurality of partial area surfaces each have an area capable of being detected by the X-ray diffraction method, and each angle [!theta!] formed among normal vectors of the plurality of partial area surfaces satisfies a condition expressed by following formula : 0.1°≤[!theta!]≤2.0° (1).


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