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HETEROJUNCTION BIPOLAR TRANSISTOR WITH TUNNELLING MIS EMITTER JUNCTION 发明申请

2022-07-31 2600 2049K 0

专利信息

申请日期 2024-11-19 申请号 WOAU04001184
公开(公告)号 WO2005022580A1 公开(公告)日 2005-03-10
公开国别 WO 申请人省市代码 全国
申请人 EPITACTIX PTY LTD
简介 A method and structure are provided for a high performance heterojunction bipolar transistor which is suited to compound semiconductor systems such as gallium arsenide (GaAs) and which utilises an emitter junction formed from a plurality of metal layers and a plurality of ultra-thin insulating layers. The metal layers chosen have work functions which form a tunnelling Metal-Insulator-Semiconductor Junction when deposited on top of an ultra-thin insulating layer. The insulating layer may be made from a rare-earth oxide such as gadolinium oxide (Gd2O3) which is epitaxially grown on a compound semiconductor substrate and possibly covered with a second ultra-thin insulating layer.


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