| 简介 |
PROBLEM TO BE SOLVED : To fabricate a nonvolatile random access memory (NVRAM) with a device that does not use any dopant at all.
SOLUTION : A heteroepitaxial junction interface between different oxide insulators is used for the NVRAM device. The electrical resistance value for the electric current flowing in the junction interface parallel to the interface is changed in a nonvolatile manner by an electric current or voltage pulse applied to the junction interface via the same path as that of the electric current. A two terminal NVRAM device that can write, read and erase information repetitively is provided by utilizing the nonvolatile change of the electrical resistance of the interface by the pulse. The junction between the two different oxide insulators is, for example, a junction between perovskite-type oxides expressed respectively by chemical formulas ABO3 and CDO3, where A and C are alkali metals (group 1A of the periodic table), alkaline-earth metals (group 2A of the periodic table), or rare-earth elements; B is a transition metal (groups 2B to 7B, and group 8 of the periodic table) or an element of groups 3A to 5A of the periodic table. O is oxygen. The elements of A and B may be mutually exchanged. Also, both A and B may be transition metals. |
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