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Micro light-emitting diode and manufacturing method of micro light-emitting diode 发明授权

2022-05-31 2590 3947K 0

专利信息

申请日期 2025-02-22 申请号 US16792557
公开(公告)号 US11309351B2 公开(公告)日 2022-04-19
公开国别 US 申请人省市代码 全国
申请人 SHARP KABUSHIKI KAISHA
简介 A micro light-emitting diode includes a first micro light-emitting diode including a first light-emitting layer and emitting light at a first wavelength, and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer emitting light at a second wavelength longer than the first wavelength, in which the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and a nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other.


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