| 申请日期 | 2024-11-29 | 申请号 | US17344672 |
| 公开（公告）号 | US20220123102A1 | 公开（公告）日 | 2022-04-21 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Samsung Electronics Co Ltd | ||
| 简介 | The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1 : (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0 | ||
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