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High-power, rare-earth-doped crystal amplifier based on ultra-low-quantum-defect pumping scheme Uti 发明授权

2022-05-31 3060 600K 0

专利信息

申请日期 2024-11-26 申请号 US16465021
公开(公告)号 US11316319B2 公开(公告)日 2022-04-26
公开国别 US 申请人省市代码 全国
申请人 IPG PHOTONICS CORPORATION
简介 A high average and peak power single transverse mode laser system is operative to output ultrashort single mode (SM) pulses in femtosecond-, picosecond- or nanosecond-pulse duration range at a kW to MW peak power level. The disclosed system deploys master oscillator power amplifier configuration (MOPA) including a SM fiber seed, outputting a pulsed signal beam at or near 1030 nm wavelength, and a Yb crystal booster. The booster is end-pumped by a pump beam output from a SM or low-mode CW fiber laser at a pump wavelength in a 1000-1020 nm wavelength range so that the signal and pump wavelengths are selected to have an ultra-low-quantum defect of less than 3%.


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