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Quantum sensor based on rare-earth-ion doped optical crystal and use thereof 发明授权

2022-05-31 3800 1094K 0

专利信息

申请日期 2025-04-06 申请号 US16491702
公开(公告)号 US11313925B2 公开(公告)日 2022-04-26
公开国别 US 申请人省市代码 全国
申请人 University of Science and Technology of China
简介 Provided is a quantum sensor based on a rare-earth-ion doped optical crystal, having : a rare-earth-ion doped optical crystal; a low temperature providing unit, which provides a low temperature operating environment to the rare-earth-ion doped optical crystal; a constant magnetic field generation unit, which applies a constant magnetic field to the rare-earth-ion doped optical crystal; a light field generation unit, which provides a light field performing optical pumping on the rare-earth-ion doped optical crystal to prepare the rare-earth-ions in an initial spin state, and a light field for exciting Raman scattering of the rare-earth-ion doped optical crystal; a pulsed magnetic field generation unit, which applies a pulsed magnetic field perpendicular to the constant magnetic field to the rare-earth-ion doped optical crystal to make the rare-earth-ion doped optical crystal generate a spin echo; and a heterodyne Raman scattering light field detection and analysis unit, which detects and analyzes a Raman scattering light field radiated from the rare-earth-ion doped optical crystal. Further provided are uses of this quantum sensor for magnetic field sensing and electric field sensing as well as a sensing method.


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