| 申请日期 | 2024-11-17 | 申请号 | TW103124797 |
| 公开（公告）号 | TW201505092A | 公开（公告）日 | 2015-02-01 |
| 公开国别 | TW | 申请人省市代码 | 全国 |
| 申请人 | 应用材料股份有限公司 | ||
| 简介 | A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less. | ||
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