| 申请日期 | 2024-11-27 | 申请号 | US16627241 |
| 公开（公告）号 | US20220144861A1 | 公开（公告）日 | 2022-05-12 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | HANSOL CHEMICAL CO LTD | ||
| 简介 | The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same. | ||
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