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Fabrication of a scintillator material of elpasolite type 发明授权

2022-07-07 3240 1088K 0

专利信息

申请日期 2025-04-10 申请号 US15960061
公开(公告)号 US10180503B2 公开(公告)日 2019-01-15
公开国别 US 申请人省市代码 全国
申请人 Saint Gobain Cristaux Et Detecteurs
简介 The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein : A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.


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