| 申请日期 | 2025-02-24 | 申请号 | US15445829 |
| 公开（公告）号 | US20180076262A1 | 公开（公告）日 | 2018-03-15 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | TOSHIBA MEMORY CORPORATION | ||
| 简介 | According to one embodiment, a semiconductor device includes a first rare earth oxide layer, a first magnetic layer being adjacent to the first rare earth oxide layer, and a nonmagnetic layer, the first magnetic layer being disposed between the first rare earth oxide layer and the nonmagnetic layer and being oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. | ||
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