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CMOS COMPATIBLE RARE-EARTH-DOPED WAVEGUIDE AMPLIFIER 发明申请

2022-06-06 1600 1063K 0

专利信息

申请日期 2025-04-24 申请号 US15629164
公开(公告)号 US20180083411A1 公开(公告)日 2018-03-22
公开国别 US 申请人省市代码 全国
申请人 LGS INNOVATIONS LLC
简介 The present application is directed to a waveguide amplifier. The waveguide amplifier has a substrate including an upper surface and a lower surface. The waveguide amplifier also has a core made of silicon or silicon nitride formed on an upper surface of the substrate. The core includes a channel configured to transmit light there through. The waveguide amplifier also includes an upper cladding layer formed above the core. The upper cladding layer includes a glass doped with rare earth material. The application is also directed to a method of amplifying a signal.


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