| 申请日期 | 2025-02-25 | 申请号 | WOUS17052803 |
| 公开（公告）号 | WO2018057797A1 | 公开（公告）日 | 2018-03-29 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | IQE PLC; PELZEL Rodney; CLARK Andrew; DARGIS Rytis; CHIN Patrick; LEBBY Michael | ||
| 简介 | Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure (100), comprising a substrate (102), a first rare earth oxide layer (104) epitaxially grown over the substrate, a first metal layer (106) epitaxially grown over the rare earth oxide layer, and a first semiconductor layer (108) epitaxially grown over the first metal layer. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
