| 申请日期 | 2025-02-25 | 申请号 | US12317180 |
| 公开（公告）号 | US9934976B2 | 公开（公告）日 | 2018-04-03 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Niloy Mukherjee; Matt Metz; Gilbert Dewey; Jack Kavalieros; Robert S Chau | ||
| 简介 | Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a contact opening in an inter layer dielectric (ILD) disposed on a substrate, wherein a source/drain contact area is exposed, forming a rare earth metal layer on the source/drain contact area, forming a transition metal layer on the rare earth metal layer; and annealing the rare earth metal layer and the transition metal layer to form a metal silicide stack structure. | ||
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