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LARGE-AREA ULTRATHIN SINGLE CRYSTAL AND RAPID GENERATION METHOD THEREFOR 发明申请

2022-06-06 4690 839K 0

专利信息

申请日期 2025-02-25 申请号 WOCN17072193
公开(公告)号 WO2018058872A1 公开(公告)日 2018-04-05
公开国别 WO 申请人省市代码 全国
申请人 RENMIN UNIVERSITY OF CHINA
简介 A large-area ultrathin single crystal generation method, comprising : using phosphor powder and an oxide substrate as raw materials, or using phosphor powder, an oxide substrate and a rare earth oxide as raw materials, preparing a flow die, and then generating a crystal, obtaining said single crystal. Also disclosed are a single crystal prepared by this method, and applications of said single crystal. The present method has the following advantages : distribution of light-emitting ion distribution is even and concentration thereof can be controlled, there is a large area and ultrathin sheet, the generation period is very short, generation temperature is low, costs are low and production volume is high.


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