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BULK ACOUSTIC WAVE RESONATORS HAVING DOPED PIEZOELECTRIC MATERIAL AND A BUFFER LAYER 发明申请

2022-06-06 1110 251K 0

专利信息

申请日期 2025-02-26 申请号 US15335402
公开(公告)号 US20180115302A1 公开(公告)日 2018-04-26
公开国别 US 申请人省市代码 全国
申请人 Avago Technologies General IP (Singapore) Pte Ltd
简介 BAW resonators comprise a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped to a minimum atomic percentage with at least one rare earth element. In a representative embodiment, the BAW resonators comprise a first buffer layer disposed over the first electrode; and a second buffer layer disposed over the first piezoelectric layer. In a representative embodiment, the first buffer layer, or the second buffer layer, or both, are doped with the at least one rare earth element to an atomic percentage that is less than the minimum percentage.


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