| 申请日期 | 2024-11-26 | 申请号 | KR1020200149843 |
| 公开（公告）号 | KR1020220063907A | 公开（公告）日 | 2022-05-18 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | 주식회사 한솔케미칼 | ||
| 简介 | The present invention relates to compounds that can be deposited by thin film through vapor deposition, and specifically, rare earth compounds that are applicable to atomic layer deposition (ALD) or Chemical vapor deposition (CVD) and have excellent thermal stability and reactivity, rare earth precursors comprising the same, methods for producing thereof and methods for forming thin films using the same. | ||
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