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FILM FORMING SYSTEM AND FILM FORMING METHOD 发明申请

2022-07-31 1280 117K 0

专利信息

申请日期 2024-11-17 申请号 JP2003080876
公开(公告)号 JP2004288984A 公开(公告)日 2004-10-14
公开国别 JP 申请人省市代码 全国
申请人 SHARP KK
简介 PROBLEM TO BE SOLVED : To provide a film forming system in which the total gas consumption can be reduced greatly even when gas is supplied to a plurality of thin film deposition spaces and the structure of the entire system can be simplified while reducing the cost of the system. SOLUTION : A plurality of thin film deposition spaces 20 for depositing an identical thin film are provided and each thin film deposition space 20 is provided with a material gas supply opening 10 capable of supplying at least material gas. Exhaust gas from at least one 20a of the plurality of thin film deposition spaces can be fed to at least another thin film deposition space 20b through an exhaust gas channel 14. Rare gas is fed to the former thin film deposition space 20a and exhaust gas is discharged from the outer exhaust opening 9 of the another thin film deposition space 20b to the outside.


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