| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor light emitting element which is improved in luminous efficiency.
SOLUTION : The semiconductor light emitting element 10 is equipped with a substrate 1, an underlying layer 2 made of first nitride semiconductor epitaxially grown on the substrate 1, and a light emitting layer 5 made of second nitride semiconductor provided on the underlying layer 2. In the first nitride semiconductor, the Al content amount is 50 atom% or more against the sum of III element contents, a dislocation density is 1011/cm2 or below, and the half band width of an X-ray locking curve on a (002) plane is 200 sec or below. The second nitride semiconductor contains one or more elements selected from a group composed of rare earth elements and transition metal elements as additive elements. The light emitting layer is thermally treated at a temperature above 1, 300°C. In the second nitride semiconductor, an Al content amount is 20 atom% or more against the sum of III element contents. |
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